This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5609G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2021G
Package
Code
Features
High forward current transfer ratio hFE
SSSMini3-F2
Absolute Maximum Ratings Ta = 25°C
Pin Name
1. Base
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
2. Emitter
3. Collector
60
50
7
V
V
Marking Symbol: 3F
100
mA
mA
mW
°C
Peak collector current
ICP
200
Collector power dissipation
Junction temperature
PC
100
Tj
125
Storage temperature
T
stg
–55 to +125
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
VCBO IC = 10 mA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 mA, IC = 0
V
V
ICBO
ICEO
hFE1
VCB = 20 V, IE = 0
0.1
100
390
mA
mA
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
VCE = 2 V, IC = 100 mA
180
90
Forward current transfer ratio
*
hFE2
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
80
0.3
V
fT
VCB = 10 V, IE = –2 mA, f = 200 MHz
MHz
Collector output capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Pulse measurement
*
Publication date : November 2008
SJC00427BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
SSSMini3-F2
Unit: mm
1.20 ±0.05
0.30 +−00..0025
3
2
1
0.13 +−00..0025
0.20 +−00..0025
(0.4)
(0.4)
0.80 ±0.05
SJC00427BED
3
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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